Prof Sefer Bora Lisesivdin

Prof Sefer Bora Lisesivdin

BSc, MSc, PhD, SMIEEE

© 2020

Publications

“The heart of science is publication and refutation. The difference between an alchemist and a scientist is that alchemists don’t publish their findings…” Cory Doctorow, 2005. (Permalink)

You can find accepted and submitted articles at the recent studies. Corrigenda and errata are at the bottom of this page. You can post errors to sblisesivdin-AT-gmail.com. The articles are copyrighted (©) by the respective publishers. Please do not hesitate to contact to obtain author copies of the articles.

Cites and h-index

Cites:740, h-index:15 (from Web of Science as of May 2020).

Selected Important Papers

Scattering Analysis of Extracted 2D carrier in AlGaN/GaN HEMT Structures

S. B. Lisesivdin, S. Acar, M. Kasap, S. Ozcelik, S. Gokden and E. Ozbay in Semicond. Sci. Technol. 22, 543 (2007) DOI.

Hall effect measurements on undoped Al 0.25 Ga 0.75 N/GaN heterostructures grown by a metalorganic chemical vapour deposition (MOCVD) technique have been carried out as a function of temperature (20–350 K) and magnetic field (0–1.5 T). Magnetic field dependent Hall data were analysed using the quantitative mobility spectrum analysis (QMSA) technique. The mobility and density within the two-dimensional electron gas (2DEG) at the Al 0.25 Ga 0.75 N/GaN interface and within the underlying GaN layer were successfully separated by QMSA. Mobility analysis has been carried out using both the measured Hall data at a single field and the extracted data from QMSA. Analysis of the temperature-dependent mobility of 2DEG extracted from QMSA indicates that the interface roughness and alloy disorder scattering mechanisms are the dominant scattering mechanisms at low temperatures while at high temperatures only polar optical phonon scattering is the dominant mechanism. Al 0.25 Ga 0.75 N/GaN interface related parameters such as well width, deformation potential constant and correlation length were also accurately obtained from the fits of the simple analytical expressions of scattering mechanisms to the 2DEG mobility.

A Simple Parallel Conduction Extraction Method (SPCEM) for MODFETs and Undoped GaN-based HEMTs

S. B. Lisesivdin, N. Balkan and E. Ozbay in Microelectron. J. 40, 413 (2009) DOI.

We report a simple method to extract the mobility and sheet carrier densities of conduction channels in conventional modulation doped field-effect transistor (MODFET) structures and unintentionally doped GaN-based high-electron mobility transistor (HEMT) structures for a special case. Extraction of the conduction channels from the magnetic field-dependent data can present number of problems; even the most recent methods encounter great difficulties. For the GaN-based HEMT structures which have lower mobilities and larger effective masses than that of GaAs-based counterparts, these difficulties become more prominent. In this study, we describe a simple method for magnetotransport analysis to extract conduction channels successfully for a special case that is commonly encountered: one bulk channel and one two-dimensional electron gas (2DEG) channel. Advantage of this method is mainly its simplicity. The analysis can be done with only two magnetic field-dependent measurements per temperature step. The method is applied to the magnetotransport results of an unintentionally doped AlGaN/AlN/GaN/AlN heterostructure over a temperature range of 29–350 K and in a magnetic field range of 0–1.5 T (mu.B<1). The results are then compared with those obtained using a commercial package for these calculations namely: quantitative mobility spectrum analysis (QMSA).

Large Zero-Field Spin Splitting in AlGaN/AlN/GaN/AlN Heterostructures

S. B. Lisesivdin, N. Balkan, O. Makarovsky, A. Patanè, A. Yildiz, M. D. Caliskan, M. Kasap, S. Ozcelik and E. Ozbay J. Appl. Phys. 105, 093701 (2009) DOI.

This work describes Shubnikov–de Haas . SdH . measurements in Al 0.22 Ga 0.78 N / AlN / GaN / AlN heterostructures. Our experiments coupled with the analysis of the Hall data at various temperatures confirm the formation of a two-dimensional electron gas . 2DEG . at the AlN/GaN interface. A beating pattern in the SdH oscillations is also observed and attributed to a zero-field spin splitting of the 2DEG first energy subband. The values of the effective spin-orbit coupling parameter and zero-field spin-split energy are estimated and compared with those reported in the literature. We show that zero-field spin-split energy tends to increase with increasing sheet electron density and that our value . 12.75 meV . is the largest one reported in the literature for GaN-based heterostructures.

DX-center Energy Calculation with Quantitative Mobility Spectrum Analysis in n-AlGaAs/GaAs Structures with Low Al Content

S. B. Lisesivdin, H. Altuntas, A. Yildiz, M. Kasap, E. Ozbay and S. Ozcelik Superlatt. Microstruct. 45, 604 (2009) DOI.

Experimental Hall data that were carried out as a function of temperature (60–350 K) and magnetic field (0–1 . 4 T) were presented for Si-doped low Al content (x = 0 . 14) n–Al x Ga 1−x As / GaAs heterostructures that were grown by molecular beam epitaxy (MBE). A 2-dimensional electron gas (2DEG) conduction channel and a bulk conduction channel were founded after implementing quantitative mobility spectrum analysis (QMSA) on the magnetic field dependent Hall data. An important decrease in 2DEG carrier density was observed with increasing temperature. The relationship between the bulk carriers and 2DEG carriers was investigated with 1D self consistent Schrödinger–Poisson simulations. The decrement in the 2DEG carrier density was related to the DX-center carrier trapping. With the simulation data that are not included in the effects of DX-centers, 17 meV of effective barrier height between AlGaAs/GaAs layers was found for high temperatures (T > 300 K). With the QMSA extracted values that are influenced by DX-centers, 166 meV of the DX-center activation energy value were founded at the same temperatures..

SCI-Articles

69 E. Kutlu, P. Narin, A. Yildiz, S. B. Lisesivdin “Effects of Annealing under Different Atmospheres on Structural and Optical Properties of USCVD grown ZnO Nanostructures” Mater. Sci. Eng. B 254, 114506 (2020).

68 R. Ibrahem, P. Narin, S. B. Lisesivdin, E. Ozbay “Investigation of electronic and optical properties of wurtzite MgZnO using GGA + U formalism”, Philos. Mag. Lett. 99, 424 (2019).

67 P.Narin, J. M. All Abbas, G. Atmaca, E. Kutlu, S. B. Lisesivdin, E. Ozbay “Ab initio Study of Electronic Properties of Armchair Graphene Nanoribbons Passivated with Heavy Metal Elements” Solid State Commun. 296, 8 (2019).

66 P. Narin, E. Arslan, M. Ozturk, M. Ozturk, S. B. Lisesivdin, E. Ozbay “Scattering analysis of ultrathin barrier (< 7 nm) GaN-based heterostructures” Appl. Phys. A Mater. Sci. Process. 125, 278 (2019).

65 J. M. All Abbas, P. Narin, E. Kutlu, S. B. Lisesivdin, E. Ozbay “Electronic properties of Zigzag ZnO nanoribbons with Hydrogen and Magnesium passivations” Physica B 556, 12 (2019).

64 J.-H. Lee, J.-M. Ju, G. Atmaca, J.-G. Kim, S.-H. Kang, Y. S. Lee, S.-H. Lee, J.-W. Lim, H.-S. Kwon, S. B. Lisesivdin,J.-H. Lee “ High Figure-of-Merit (V2BR/RON) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier” IEEE J. Electron Dev. Soc. 6, 1179 (2018).

63 Ö. Ömeroğlu, E. Kutlu, P. Narin, S. B. Lisesivdin, E. Ozbay “Electronic Properties of Graphene Nanoribbons Doped with Zinc, Cadmium, Mercury Atoms” Physica E 104, 124 (2018).

62 G. Atmaca, P. Narin, E. Kutlu, T. V. Malin, V. G. Mansurov, K. S. Zhuravlev, S. B. Lisesivdin, E. Ozbay, “Negative Differential Resistance Observation and a New Fitting Model for Electron Drift Velocity in GaN-Based Heterostructures” IEEE Trans. Electron Dev. 65, 950 (2018).

61 P. Narin, E. Kutlu, G. Atmaca, A. Atilgan, A. Yildiz. S. B. Lisesivdin, “Structural and optical properties of hexagonal ZnO nanostructures grown by ultrasonic spray CVD” Optik 168, 86 (2018).

60 E. Kutlu, P. Narin, S. B. Lisesivdin, E. Ozbay “Electronic and optical properties of black phosphorus doped with Au, Sn and I atoms” Philos. Mag. 98, 155 (2018).

59 P. Narin, E. Kutlu, G. Atmaca, S. B. Lisesivdin, E. Ozbay “A first principles investigation of the effect of aluminum, gallium and indium impurities on optical properties of B-Si3N4 structure” Optik 147, 115 (2017).

58 J. M. Al Abbas, P. Narin, G. Atmaca, E. Kutlu, B. Sarikavak-Lisesivdin, S. B. Lisesivdin “The effect of doping in different layers on 2DEG for ultrathin-barrier AlN/GaN heterostructures” Optoelectron. Adv. Mater.-Rapid Comm. 11, 328 (2017).

57 J. M. All Abbas, G. Atmaca, P. Narin, E. Kutlu, B. Sarikavak-Lisesivdin, S. B. Lisesivdin “A Comparative Study of AlGaN and InGaN Back-Barriers in Ultrathin-Barrier AlN/GaN Heterostructures” J. Elec. Mater. 46, 5278 (2017).

56 E. Kutlu, P. Narin, G. Atmaca, B. Sarikavak-Lisesivdin, S. B. Lisesivdin, E. Ozbay “Electronic structure of β-Si3N4 crystals with substitutional icosagen group impurities” J. Optoelectron. Adv. Mater. 19, 278 (2017).

55 P. Narin, E. Kutlu, B. Sarikavak-Lisesivdin, S. B. Lisesivdin, E. Özbay “Electronic Properties of Li-doped Zigzag Graphene Nanoribbons” Physica E 84, 543 (2016).

54 E. Kutlu, P. Narin, G. Atmaca, B. Sarikavak-Lisesivdin, S. B. Lisesivdin, E. Özbay “Effect of substitutional As impurity on electrical and optical properties of β−Si3N4 Structure” Mater. Res. Bull. 83, 128 (2016).

53 G. Atmaca, S. Ardali, E. Tiras, T. Malin, V.G. Mansurov, K.S. Zhuravlev, S.B. Lisesivdin, “Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si3N4 passivation layer”, Solid-State Electronics 118, 12-17 (2016).

52 I. Kara, Y. Sarikavak, S. B. Lisesivdin, M. Kasap “Evaluation of Morphological and Chemical Differences of Gunshot Residues in Different Ammunitions Using SEM/EDS Technique” Environ. Foren. 17, 68 (2016).

51 G. Atmaca, P. Narin, B. Sarikavak-Lisesivdin, S. B. Lisesivdin “Two Dimensional Electron Gas in a Hybrid GaN/InGaN/ZnO Heterostructure with Ultrathin InGaN Channel Layer” Physica E 79, 67 (2016).

50 G. Atmaca, S. Ardali, P. Narin, E. Kutlu, S. B. Lisesivdin, T. Malin, V. Mansurov, K. Zhuravlev, E. Tiras “Energy relaxation of hot electrons by LO phonon emission in AlGaN/AlN/GaN heterostructure with in situ Si3N4 passivation” J. Alloys Compounds 659, 90 (2016).

49 S. Ardali, G. Atmaca, S. B. Lisesivdin, T. Malin, V. Mansurov, K. Zhuravlev, E. Tiras “The variation of temperature dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation” Phys. Stat. Sol. B 252, 1960 (2015).

48 B. Sarikavak-Lisesivdin, S. B. Lisesivdin, N. Balkan, G. Atmaca, P. Narin, H. Cakmak, E. Ozbay “Energy relaxation of electrons in InGaN quantum wells” Metall. Mater. Trans. A 46, 1565 (2015).

47 G. Atmaca, P. Narin, B. Sarikavak-Lisesivdin, S. B. Lisesivdin, M. Kasap “Electron Transport Properties of Two Dimensional Electron Gas in BexZn1-xO/ZnO Heterostructures” Philos. Mag. 95, 79 (2015).

46 G. Atmaca, P. Tasli, G. Karakoc, E. Yazbahar and S. B. Lisesivdin “Numerical Investigation of the 2DEG Properties of AlGaN/AlN/GaN HEMT Structures with InGaN/GaN MQW Back-Barrier Structure” Physica E 65, 110 (2015).

45 O. Donmez, F. Sarcan, S. B. Lisesivdin, M. P. Vaughan, A. Erol, M. Gunes, M. C. Arikan, J. Puustinen and M. Guina, “Analytic modeling of temperature dependence of 2D carrier mobility in as-grown and annealed GaInNAs/GaAs quantum well structures” Semicond. Sci. Technol. 29 125009 (2014).

44 S. B. Lisesivdin, G. Atmaca, E. Arslan, S. Cakmakyapan, O. Kazar, S. Butun, Jawad-ul-Hassan, E. Janzén and E. Ozbay “Extraction and scattering analyses of 2D and bulk carriers in epitaxial graphene-on-SiC structure” Physica E 63, 87 (2014).

43 E. Arslan, S. Cakmakyapan, O. Kazar, S. Bütün, S. B. Lisesivdin, N. A. Cinel, G. Ertas, S. Ardali, E. Tiras, J. Ul-Hassan, E.Janzén and Ekmel Özbay “SiC substrate effects on electron transport in the epitaxial Graphene layer” Electron. Mater. Lett. 10, 387 (2014).

42 S. B. Lisesivdin, N. A. Khan, S. Mazzucato, N. Balkan, M. J. Adams, V.-M. Korpijärvi, M. Guina, G. Mezosi and M. Sorel “Optical gain in 1.3 μm electrically-driven dilute nitride VCSOAs” Nanoscale Res. Lett. 9, 22 (2014).

41 K. Elibol, G. Atmaca, P. Tasli and S. B. Lisesivdin “A Numerical Study on Subband Structure of InxAl1-xN/GaN-Based HEMT Structures with Low-Indium (x<0.10) Barrier Layer” Solid State Commun. 162, 8 (2013).

40 A. F. Kuloglu, B. Sarikavak-Lisesivdin, S. B. Lisesivdin, E. Ozbay “First-principles calculations of Pd-terminated symmetrical armchair graphene nanoribbons” Comp. Mater. Sci. 68, 18 (2013).

39 B. Sarikavak-Lisesivdin, S. B. Lisesivdin, E. Ozbay “The Effect of InxGa1-xN Back-barriers on the Dislocation Densities in Al0.31Ga0.69N/AlN/GaN/ InxGa1-xN/GaN Heterostructures (0.05 ≤ x ≤ 0.14)” Cur. Appl. Phys. 13, 224 (2013).

38 B. Sarikavak-Lisesivdin, S. B. Lisesivdin, E. Ozbay “Ab initio study of Ru-terminated and Ru-doped armchair graphene nanoribbons” Mol. Phys. 110, 2295 (2012).

37 E. Tiras, O. Celik, S. Mutlu, S. Ardali, S. B. Lisesivdin, E. Ozbay “Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures” Superlat. Microstruct. 51, 733 (2012).

36 O. Celik, E. Tiras, S. Ardali, S. B. Lisesivdin, E. Ozbay “Determination of the LO phonon energy by using electronic and optical methods in AlGaN/GaN” Cent. Eur. J. Phys. 10, 485 (2012).

35 O. Kelekci, S. B. Lisesivdin, S.Ozcelik, E. Ozbay “Numerical optimization of In-mole fraction and layer thicknesses in AlxGa1-xN/AlN/GaN high electron mobility transistors with InGaN back barrier” Physica B 406, 1513 (2011).

34 A. Yildiz, P. Tasli, B. Sarikavak, S. B. Lisesivdin, M. K. Ozturk, M. Kasap, S. Ozcelik, E. Ozbay “Grain boundary related electrical transport in Al-rich AlxGa1-xN layers grown by metal organic chemical vapor deposition” Semiconductors+ 45, 33 (2011).

33 H. Yu, S. B. Lisesivdin, B. Bolukbas, O. Kelekci, M. K. Ozturk, S. Ozcelik, D. Caliskan, M. Ozturk, H. Cakmak, P. Demirel and E. Ozbay “Improvement of breakdown characteristics in AlGaN/GaN/AlxGa1−xN HEMT based on a grading AlxGa1−xN buffer layer” Phys. Stat. Sol. a 207, 2593 (2010).

32 P. Tasli, B. Sarikavak, G. Atmaca, K. Elibol, A. F. Kuloglu and S. B. Lisesivdin “Numerical Simulation of Novel Ultrathin Barrier n-GaN/InAlN/AlN/GaN HEMT Structures: Effect of In Mole Fraction, Doping and Layer Thicknesses” Physica B 405, 4020 (2010).

31 A. Bengi, S. B. Lisesivdin, M. Kasap, T. Mammadov, S. Ozcelik, E. Ozbay “Analysis of defect related optical transitions in AlGaN/GaN heterostructures” Mater. Sci. Semicond. Process. 13, 105 (2010).

30 S. B. Lisesivdin, A. Yildiz, N. Balkan, M. Kasap, S. Ozcelik, E. Ozbay “Scattering Analysis of Two-dimensional Electrons in AlGaN/GaN with Bulk Related Parameters Extracted by Simple Parallel Conduction Extraction Method” J. Appl. Phys. 108, 013712 (2010).

29 P. Tasli, A. Yildiz, M. Kasap, E. Ozbay, S. B. Lisesivdin and S. Ozcelik “Contributions of the impurity band and electron–electron interactions to the magnetoconductance of AlGaN” Philos. Mag. 90, 3591 (2010).

28 S. B. Lisesivdin, P. Tasli, M. Kasap, M. Ozturk, E. Arslan, S. Ozcelik, and E. Ozbay, “Double subband occupation of the two-dimensional electron gas in InxAl1-xN/AlN/GaN/AlN Heterostructures with Low Indium Barrier (0.064 < x < 0.139)” Thin Solid Films 518, 5572 (2010).

27 A. Yildiz, S. B. Lisesivdin, M. Kasap, D. Mardare “The substrate temperature dependent electrical properties of titanium dioxide thin films” J. Mater. Sci.: Mater. Electron. 21, 692 (2010).

26 S. Gokden, R. Tulek, A. Teke, J. H. Leach, Q. Fan, J. Xie, U. Ozgur, H. Morkoc, S. B. Lisesivdin, E. Ozbay “Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with InGaN channel” Semicond. Sci. Technol. 25, 045024 (2010).

25 A. Yildiz, S. B. Lisesivdin, P. Tasli, E. Ozbay, and M. Kasap “Determination of the critical indium composition corresponding to the metal-insulating transition in InxGa1-xN (0.06 < x < 0.135) layers” Curr. Appl. Phys. 10, 838 (2010).

24 A. Yildiz, S. B. Lisesivdin, M. Kasap, S. Ozcelik, E. Ozbay and N. Balkan “Investigation of low temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with SPCEM” Appl. Phys. A 98, 557 (2010).

23 P. Tasli, S. B. Lisesivdin, A. Yildiz, M. Kasap, E. Arslan, E. Özbay, and S. Özcelik “Well parameters of the two-dimensional electron gas in Al0.88In0.12N/AlN/GaN/AlN heterostructures grown by MOCVD” Cryst. Res. Tech. 45, 133 (2010).

22 S. B. Lisesivdin, E. Ozbay “Effect of various pseudomorphic AlN layer insertions on the electron densities of two-dimensional electron gas in lattice-matched In0.18Al0.82N/GaN based heterostructures” Optoelectron. Adv. Mater.: Rapid. Comm. 3, 904 (2009).

21 A. Yildiz, S. B. Lisesivdin, H. Altuntas, M. Kasap and S. Ozcelik “Electrical conduction properties of Si δ-doped GaAs grown by MBE” Physica B 404, 4202 (2009).

20 G. Atmaca, K. Elibol, S. B. Lisesivdin, M. Kasap, E. Ozbay “Numerical optimization of Al-mole fractions and layer thicknesses in normally-on AlGaN-GaN double-channel high electron mobility transistors (DCHEMTs)” J. Optoelectron. Adv. Mater. 11, 578 (2009).

19 A. Teke, S. Gökden, R. Tülek, J. H. Leach, Q. Fan, J. Xie, Ü. Özgür, H. Morkoç, S. B. Lisesivdin, E. Özbay, “The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures “New J. Phys. 11, 063031 (2009).

18 S. B. Lisesivdin, N. Balkan, O. Makarovsky, A. Patanè, A. Yildiz, M. D. Caliskan, M. Kasap, S. Ozcelik, E. Ozbay “Large Zero-Field Spin Splitting in AlGaN/AlN/GaN/AlN Heterostructures” J. Appl. Phys. 105, 093701 (2009).

17 S. B. Lisesivdin, H. Altuntas, A. Yildiz, M. Kasap, E. Ozbay, S. Ozcelik, “DX-center Energy Calculation with Quantitative Mobility Spectrum Analysis in n-AlGaAs/GaAs Structures with Low Al Content” Superlatt. Microstruct. 45, 604 (2009).

16 A. Yildiz, S. B. Lisesivdin, M. Kasap, D. Mardare “Non-adiabatic Small Polaron Hopping Conduction in Nb-doped TiO2 thin films” Physica B 404, 1423 (2009).

15 Y. Sun, N. Balkan, M. Aslan, S. B. Lisesivdin, H. Carrere, M. C. Arikan, X. Marie “Electronic transport in n- and p-type modulation doped GaxIn1-xNyAs1-y/GaAs Quantum Wells” J. Phys: Condens. Matt. 21, 174210 (2009) Invited Article.

14 S. B. Lisesivdin, N. Balkan, E. Ozbay “A Simple Parallel Conduction Extraction Method (SPCEM) for MODFETs and Undoped GaN-based HEMTs” Microelectron. J. 40, 413 (2009).

13 A. Yildiz, S. B. Lisesivdin, M. Kasap, M. Bosi “Anomalous temperature dependence of the electrical resistivity in In0.17Ga0.83N” Solid State Commun. 149, 337 (2009).

12 A. Yildiz, S. B. Lisesivdin, M. Kasap, D. Mardare “Electrical Properties of TiO2 Thin Films” J. Non-Crys. Solids 354, 4944 (2008).

11 S. B. Lisesivdin, S. Demirezen, M. D. Caliskan, A. Yildiz, M. Kasap, S. Ozcelik and E. Ozbay “Growth parameters investigation of Al0.25Ga0.75N/GaN/AlN heterostructures with Hall Effect Measurements” Semicond. Sci. Technol. 23, 095008 (2008).

10 E. Arslan, S. Butun, S. B. Lisesivdin, M. Kasap, S. Ozcelik, and E. Ozbay “The persistent photoconductivity effect in AlGaN/GaN heterostructures grown on sapphire and SiC substrates” J. Appl. Phys. 103, 103701 (2008).

9 S. Acar, S. B. Lisesivdin, M. Kasap, S. Ozcelik and E. Ozbay “Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition” Thin Solid Films 516, 2041 (2008).

8 A. Yildiz, F. Dagdelen, S. Acar, S. B. Lisesivdin, M. Kasap, Y. Aydogdu and M. Bosi “Stokes shift and bandgap bowing in InxGa1-xN (0.060 ≤ x ≤ 0.105) grown by MOVPE” Acta Physica Pol. (a) 113, 731 (2008).

7 S. B. Lisesivdin, E. Arslan, M. Kasap, S. Ozcelik and E. Ozbay, “Self-consistent scattering analysis of Al0.2Ga0.8N/AlN/GaN/AlN heterostructures grown on 6H-SiC substrates using photo-Hall effect measurements” J. Phys.: Condens. Matt. 20, 045208 (2008).

6 S. B. Lisesivdin, A. Yildiz and M. Kasap, “Optimization of alloy composition, interlayer and barrier thicknesses in AlxGa1-xN/(AlN)/GaN high electron mobility transistors” Opt. Adv. Mater.-Rapid Comm. 1 (9), 467 (2007).

5 A. Yildiz, S. B. Lisesivdin, M. Kasap, D. Mardare “High temperature variable-range hopping conductivity in undoped TiO2 thin film” Opt. Adv. Mater.-Rapid Comm. 1 (10), 531 (2007).

4 A. Yildiz, S. B. Lisesivdin, S. Acar, M. Kasap and M. Bosi, “Electron transport in Ga-rich InxGa1-xN alloys” Chin. Phys. Lett. 24, 2930 (2007).

3 S. B. Lisesivdin, A. Yildiz, S. Acar, M. Kasap, S. Ozcelik and E. Ozbay “The Effect of Strain Relaxation on Electron Transport in Undoped Al0.25Ga0.75N/GaN HEMT Structures”Physica B 399 (2), 132 (2007).

2 S. B. Lisesivdin, A. Yildiz, S. Acar, M. Kasap, S. Ozcelik and E. Ozbay “Electronic Transport Characterization of AlGaN/GaN HEMT Structures grown by MOCVD” Appl. Phys. Lett. 91, 102113 (2007). Selected for Virtual Journal of Nanoscale Science & Technology 16 12 (2007).

1 S. B. Lisesivdin, S. Acar, M. Kasap, S. Ozcelik, S. Gokden and E. Ozbay “Scattering Analysis of Extracted 2D carrier in AlGaN/GaN HEMT Structures” Semicond. Sci. Technol. 22, 543 (2007).

SCI Technical Notes

1 I. Kara, S. B. Lisesivdin, M. Kasap, E. Er, U. Uzek “The Relationship between the Surface Morphology and Chemical Composition of Gunshot Residue Particles” J. Foren. Sci. 60, 1030 (2015).

Non-SCI Articles

1 O. Celik, E. Tiras, S. Ardali, S. B. Lisesivdin, E.Ozbay “Determination of the in-plane effective mass and quantum lifetime of 2D electrons in AlGaN/GaN based HEMTs” Phys. Stat. Sol. (c) 8, 1625 (2011).

Proceedings

90 S. B. Lisesivdin, J. Lang, F. Jelezko “Spin-coherence time measurements of NV- centers in 15N+, 15N2+ and O+ implanted diamond” Quantum Optics and Informatics Meeting – 4 (Kobit 4), İzmir (2020).

89 B. Sarikavak-Lisesivdin, S. B. Lisesivdin, E. Ozbay, F. Jelezko “Spin-polarized DFT calculations of nitrogen-vacancy color centers in diamond with various XC potentials” Quantum Optics and Informatics Meeting – 4 (Kobit 4), İzmir (2020).

88 O. Omeroglu, S. B. Lisesivdin, E. Ozbay “The Optical Properties of Group-III Nitrides with LDA-1/2 Approximation” 20th National Workshop on Optics, Electro-optics and Photonics, Ankara, P78, (2018).

87 G. Atmaca, P. Narin, E. Kutlu, S. Ardali, E. Tiras, T. Malin, V. G. Mansurov, K. S. Zhuravlev, S. B. Lisesivdin, E. Ozbay “An Investigation on Lifetime of Hot Phonons in GaN-Based Heterostructures” 20th National Workshop on Optics, Electro-optics and Photonics, Ankara, P68, (2018).

86 J. M. All Abbas, P. Narin, E. Kutlu, S. B. Lisesivdin, E. Ozbay “First Principle Study of ZnO Nanoribbon Passivated with H and Mg” 20th National Workshop on Optics, Electro-optics and Photonics, Ankara, P37, (2018).

85 E. Kutlu, P. Narin, A. Yildiz, S. B. Lisesivdin “Structural and Optical Properties of MgxZn1-xO Nanostructures Depending on Growth Temperatures” 20th National Workshop on Optics, Electro-optics and Photonics, Ankara, P31, (2018).

84 E. Kutlu, P. Narin, A. Yildiz, S. B. Lisesivdin “Effect of Transducer Power on Optical and Structural Properties of ZnO Nanostructures” 20th National Workshop on Optics, Electro-optics and Photonics, Ankara, P30, (2018).

83 P. Narin, E. Kutlu, S. B. Lisesivdin, E. Ozbay “Growth of ZnO Nanostructures on Sapphire by Ultrasonic Spray CVD” 20th National Workshop on Optics, Electro-optics and Photonics, Ankara, P29, (2018).

82 P. Narin, E. Kutlu, S. B. Lisesivdin,“Optical and Structural Properties of ZnO Grown by Mist CVD Using Different Precursor Molarity” 20th National Workshop on Optics, Electro-optics and Photonics, Ankara, P28, (2018).

81 R. Ibrahem, P. Narin, S. B. Lisesivdin, E. Ozbay “First-Principles Calculation of Optical Properties of Magnesium Zinc Oxide” 20th National Workshop on Optics, Electro-optics and Photonics, Ankara, P14, (2018).

80 O. Omeroglu, S. B. Lisesivdin, E. Ozbay “The Electronic Properties of Asymmetrical Armchair Boron Nitride Nanoribbons With Germanium Termination” p475, Turkish Physical Society 34th International Physics Congress, September 5-9 2018, Bodrum, Turkey.

79 O. Omeroglu, S. B. Lisesivdin, E. Ozbay “Improvement of the Theoretical Band Gaps for AlN, GaN and InN with LDA-1/2 Approach” p495, Turkish Physical Society 34th International Physics Congress, September 5-9 2018, Bodrum, Turkey.

78 M. T. Haliloglu, S. B. Lisesivdin, E. Ozbay “Back-Side Via Etching Application of SiC for GaN-Based Transistors” 1st Light and Light-Based Technologies Workshop, Ankara, p51 (2018).

77 S. Mutlu, S. B. Lisesivdin, A. Erol, E. Tiras “Evoluiton of HELLISH devices: Colorful story of HELLISH Devices from IR to VIS light” Celebrating Naci:The Physics of Optoelectronic Materials and Devices, 27-28 March 2017, Colchester, UK.

76 A. Erol, S. Mutlu, S. B. Lisesivdin, E. Tiras, “Hot electron Transport Based Devices for Optoelectronics” Int. Conf. on Condens. Matt and Mater. Sci., October 11-15 2017, Adana, Turkey.

75 S. B. Lisesivdin, E. Kutlu, J. M. Allabbas, O. Omeroglu, R. Ibrahem, E. Ozbay “Zn ve Cd Atomları ile Katkılanmış “Armchair” Grafen Nanoşeritlerin Elektronik Yapıları” ADIM Physics Days VI, July 19-21 2017, Balikesir, Turkey.

74 J.-H. Lee, G. Atmaca, J. -G. Kim, D. -H. Son, J. -M. Ju, S. B. Lisesivdin, J. -H. Lee, High Voltage Low Leakage Current AlGaN/GaN HEMTs with Multi-layer Buffer and AlGaN Back-Barrier Structure, P310, Turkish Physical Society 33rd International Physics Congress, September 6-10 2017, Bodrum, Turkey.

73 J. M. Al Abbas, P. Narin, S. B. Lisesivdin, E. Ozbay, A First Principle Investigations of The Electronic Structures For ZGNRs Terminated With Zn, Cd and H, P587, Turkish Physical Society 33rd International Physics Congress, September 6-10 2017, Bodrum, Turkey.

72 A. F. Kuloglu, S. B. Lisesivdin, E. Ozbay, A Theoretical Study of (5,0) Zigzag BexZn1-Xo Nanotubes: Investigation of Structural, Electronic and Optic Properties Using Density Functional Theory, P588, Turkish Physical Society 33rd International Physics Congress, September 6-10 2017, Bodrum, Turkey.

71 E. Kutlu, O. Omeroglu, R. Ibrahem, S. B. Lisesivdin, E. Ozbay, First Principle Calculations of Zn and Cd-Doped Zigzag Graphene Nanoribbons, P611, Turkish Physical Society 33rd International Physics Congress, September 6-10 2017, Bodrum, Turkey.

70 O. Omeroglu, E. Kutlu, S. B. Lisesivdin, E. Ozbay, Investigation of The Electronic Properties of Zinc and Magnesium Adsorption on Graphene Sheets, P620, Turkish Physical Society 33rd International Physics Congress, September 6-10 2017, Bodrum, Turkey.

69 G. Atmaca, J. -G. Kim, J. -H. Lee, C. -H. Won, S. -H. Kang, S. B. Lisesivdin, J. -H. Lee, Numerical Optimization of 2DEG Improvement in AlGaN/GaN HEMTs with C-GaN/u-GaN Multi-layer Buffer Structure, P629, Turkish Physical Society 33rd International Physics Congress, September 6-10 2017, Bodrum, Turkey.

68 R. Ibrahem, P. Narin, S. B. Lisesivdin, E. Ozbay, Optimized Ab Initio Studies on Electronic Structure of Wurtzite MgZnO, P630, Turkish Physical Society 33rd International Physics Congress, September 6-10 2017, Bodrum, Turkey.

67 P. Narin, J. M. Al Abbas, S. B. Lisesivdin, E. Ozbay, The Effect of Zinc, Cadmium and Hydrogen Terminations on The Electronic Structure of Symetrical AGNRs, P648, Turkish Physical Society 33rd International Physics Congress, September 6-10 2017, Bodrum, Turkey.

66 E. Kutlu, P. Narin, G. Atmaca, S. B. Lisesivdin, E. Ozbay “Sn, I, Au gibi Bazı Safsızlıkların Siyah Fosfor’un Elektronik ve Optik Özelliklerine Etkileri” 18. Ulusal Optik, Elektro-Optik ve Fotonik Çalıştayı, Ankara P26,(2016).

65 P. Narin, E. Kutlu, G. Atmaca, B. Sarıkavak-Lisesivdin, S. B. Lisesivdin, E. Ozbay “Ultraince Bariyere Sahip AlN/GaN ve InAlN/GaN HEMT Yapıların Yapısal ve Yüzey Özelliklerinin İncelenmesi” 18. Ulusal Optik, Elektro-Optik ve Fotonik Çalıştayı, Ankara P72,(2016).

64 G. Atmaca I. Berkutov, O. A. Mironov, K. Rogacki, S. B. Lisesivdin, E. Ozbay “The Weak Localization In A Two-Dimensional Electon Gas In AlInN/AlN/GaN Heterostructures” 18. Ulusal Optik, Elektro-Optik ve Fotonik Çalıştayı, Ankara P43,(2016).

63 J. M. Al Abbas, G. Atmaca, P. Narin, E. Kutlu, B. Sarikavak-Lisesivdin, S. B. Lisesivdin “Numerical Investigation Of 2DEG Properties In Ultrathin-Barrier AlN/GaN Heterostructures With AlGaN and InGaN Back-Barriers” 18. Ulusal Optik, Elektro-Optik ve Fotonik Çalıştayı, Ankara P47,(2016).

62 M. Ozturk, E. Arslan, P. Narin, S. B. Lisesivdin, B. Sarikavak-Lisesivdin, E. Ozbay “Ultraince Bariyerli GaN-Temelli HEMT’lerde Elektron Gazının Elektriksel Özellikleri ve Saçılma Analizleri” 18. Ulusal Optik, Elektro-Optik ve Fotonik Çalıştayı, Ankara P50,(2016).

61 J. M. Al abbas, P. Narin, E. Kutlu, G. Atmaca, S. B. Lişesivdin, B. Sarıkavak-Lişesivdin “P-tipi ve N-tipi InGaN Arka-Bariyerli Ultraince AlInN/GaN Çoklu Yapılarda İki Boyutlu Elektron Gazı” ADIM Physics Congress V, p.163 (2016).

60 J. M. Al abbas, P. Narin, G. Atmaca, E. Kutlu, S. B. Lişesivdin, B. Sarıkavak-Lişesivdin “Ultraince Bariyerli AlN/GaN Çoklu Yapılarda Farklı Katmanların 2BEG Üzerine Etkisi” ADIM Physics Congress V, p.164 (2016).

59 E. Kutlu, P. Narin, G. Atmaca, J. M. Al abbas, B. Sarıkavak Lişesivdin, S. B. Lişesivdin “Li Katkılı Zigzag Kenarlı Grafen Nano Şeritlerin Elektronik Özelliklerinin İncelenmesi” ADIM Physics Congress V, p.151 (2016).

58 E. Tiras, G. Atmaca, S. B. Lisesivdin, S. Ardali, T. Malin, V. Mansurov, K. Zhuravlev, Power-loss Mechanisms in Surface Passivated AlGaN/AlN/GaN Heterojunctions, 11th Conference on Laser and Electro-Optic Pacific Rim, CLEO-PR 2015, 24-28 August, Busan, Korea (2015).

57 S. Ardali, G. Atmaca, S.B. Lisesivdin, T. Malin, V. Mansurov, K. Zhuravlev, E. Tiras, Surface Passivation Effect in AlGaN/AlN/GaN Heterostructure, European Materials Research Society 2015 Spring Meeting, I-P1 3 (2015).

56 T. Tiras, G. Atmaca, S.B. Lisesivdin, T. Malin, V. Mansurov, K. Zhuravlev, E. Tiras, The longitudinal optical phonon energy in passivated AlGaN/AlN/GaN, European Materials Research Society 2015 Spring Meeting, I-P1 5 (2015).

55 P. Narin, E. Kutlu, G. Atmaca, B, Sarikavak-Lisesivdin, S. B. Lisesivdin, “lnvestigation of Optical Properties of the Beta-Si3N4 structure doped with some Group IIIA Elements” 1st International Conference on Organic Electronic Material Technologies, p102 (2015).

54 E. Kutlu, P. Narin, G. Atmaca, B. Sarikavak-Lisesivdin, S. B. Lisesivdin “First Principle Calculations of Electrical Properties of lnsulator Wurtzite the Beta-Si3N4 with the Aluminum, lndium and Gallium lmpurities” 1st International Conference on Organic Electronic Material Technologies, p103 (2015).

53 G. Atmaca, T. Malin, E. Kutlu, S. Ardali, P. Narin, V. Mansurov, B. Sarikavak-Lisesivdin, S. B. Lisesivdin, E. Tiras, K. Zhuravlev, “The Effect of In-Situ Si3N4 Passivation on Hot-Electron Energy Relaxation Rates in AlGaN/GaN Heterostructures” Нитриды галлия, индия и алюминия: структуры и приборы, Санкт-Петербурге, p141-142 (2015)

52 G. Atmaca, P. Narin, E. Kutlu, S. B. Lisesivdin “The Effect of Si3N4 Passivation with As-Impurity on the Device Properties of AlGaN/GaN HEMT Structures” IX. Uluslararası Balkan Fizik Birliği Konferansı, p410 (2015).

51 S. B. Lisesivdin, G. Atmaca, S. Ardali, E. Tiras, T. Malin, V. Mansurov, K. Zhuravlev “The Effect of in situ Si3N4 Passivation on 2DEG Quantum Well Parameters in AlGaN/GaN Heterostructures IX. Uluslararası Balkan Fizik Birliği Konferansı, p441 (2015).

50 S. B. Lisesivdin, “Implementation of Simple Parallel Conduction Extraction Method (SPCEM) for seperating 2D and 3D conduction channels in semiconductor structures”Конференция И Школа Молодых Учёных По Актуальным Проблемам Физики Полупроводниковых Структур, Novosibirsk, 25, (2014).

49 E. Kutlu, P. Narin, G. Atmaca, B. Sarikavak-Lisesivdin, S. B. Lisesivdin “Ab initio study of oxygen and arsenic impurities on non-linear optical properties of β–Si3N4 material”Конференция И Школа Молодых Учёных По Актуальным Проблемам Физики Полупроводниковых Структур, Novosibirsk, 77, (2014).

48 G. Atmaca, A. E. Evrensel, S. B. Lisesivdin “Influence of interface traps on device performance of AlGaN/GaN HEMTS with Si3N4 passivation” Turkish Physical Society 31thInternational Physics Congress, p371 (2014).

47 E. Kutlu, P.Narin, G. Atmaca, S. B. Lisesivdin, M. Kasap “Investigation of electrical properties of two dimensional hole gas in hybrid InGaN/ZnO heterotructure” Turkish Physical Society 31th International Physics Congress, p401 (2014).

46 S. B. Lisesivdin, E. Kutlu, P. Narin, G. Atmaca, B. Sarikavak-Lisesivdin, “Investigation of the effect of the arsenic impurity on the electronic and optical properties of β–Si3N4dielectric material” Turkish Physical Society 31th International Physics Congress, p402 (2014).

45 P. Narin, G. Atmaca, S. B. Lisesivdin, “Effects of ultrathin InGaN channel layer on two dimensional electron gas in hybrid GaN/InGaN/ZnO heterostructures” Turkish Physical Society 31th International Physics Congress, p406 (2014).

44 S. B. Lisesivdin, G. Atmaca, E. Arslan, J. Ul-Hassan, E. Janzén, E. Ozbay “SiC üzerine büyütülen grafen yapılarda elektriksel iletim kanallarının ayrıştırılıp incelenmesi XIX. Solid State Matter Physics Ankara Meeting, S13, (2013). [Invited].

43 S.B. Lisesivdin, N. A. Khan , S. Mazzucato , N. Balkan, M. J. Adams “Gain in electrically-driven 1.3 um dilute nitride VCSOAs” COST MP0805 Final Meeting, Istanbul, P17 (2013).

42 P. Narin, G. Atmaca, E. Boyalı, S. B. Lisesivdin, M. Kasap, S. Ozcelik, “Scattering Analysis of 2DEG in AlInN/GaN Based Heterostructures with GaN and InGaN Quantum Wells”, Turkish Physical Society 30th International Physics Congress, p530 (2013).

41 E. Boyalı, P. Narin, G. Atmaca, S. B. Lisesivdin, M. Kasap and S. Ozcelik, “The Investigation of Temperature Dependent Electrical Transport Properties of InxGa1-xP/GaAs”, Turkish Physical Society 30th International Physics Congress, p482 (2013).

40 P. Narin, G. Atmaca, B. Sarıkavak-Lisesivdin, S. B. Lisesivdin, M. Kasap, “A Numerical Investigation on Electronic Properties of Two Dimensional Electron Gas in BexZn1-xO/ZnO Heterostructures”, Turkish Physical Society 30th International Physics Congress, p529 (2013).

39 G. Atmaca, P. Tunay Taşlı, S. B. Lişesivdin, “Electron Confinement in Lattice-Matched InAlN/AlN/GaN Heterostructures with AlyGa1-yN Back-barrier”, 8th Nanoscience and Nanotechnology Conference, PP-332 (2012).

38 B. Sarikavak Lisesivdin, S. B. Lisesivdin, E. Ozbay, “First Principles Study of Interaction Between Ru and Graphene Nanoribbons” 2nd Int. Conf. on Comp. for Sci. and Techno.pp-70 (2012).

37 P. Tasli, S. B. Lisesivdin, M. Kasap, S. Ozcelik, E. Ozbay “InAlN/GaN Temelli Yuksek Elektron Mobiliteli Transistörlerin (HEMT) Elektron ve Magneto Iletim Ozellikleri” ADIM Physics Congress II, 65 (2012).

36 B. Sarikavak-Lisesivdin, S. B. Lisesivdin, E. Ozbay “AlGaN/GaN-temelli Yuksek Hareketlilige Sahip Transistorlerde InGaN Geribariyerin Dislokasyon Yogunluguna Etkisi”ADIM Physics Congress II, 131 (2012).

35 A. F. Kuloglu, B. Alsancak, C. Gunes, S. B. Lisesivdin, E. Ozbay “Kenarlari Paladyum Atomlari ile Sonlandirilmis Farkli Genisliklerdeki Armchair Grafen Nanoseritlerin Elektronik Ozelliklerinin Yogunluk Fonksiyonu Teorisi Kullanilarak Incelenmesi” I. Solid State Matter Physics İzmir Meeting, p01 (2012).

34 C. Günes, A. F. Kuloglu, S. B. Lisesivdin, E. Ozbay, “GaN-tabanli HEMT Yapilarin Hareketliligi ve Tasiyici Yogunlugunun Deneysel Incelenmesi” I. Solid State Matter Physics İzmir Meeting, p18 (2012).

33 K. Elibol, C. Gunes, A. F. Kuloglu, E. Boyali and S. B. Lisesivdin “A Numerical Study on Effects of InAlN/AlGaN Barrier in InAlN/AlGaN/AlN/GaN-based High Electron Mobility Transistors” Turkish Physical Society XXVIII. International Conference, p711 (2011).

32 K. Elibol, G. Atmaca, O. Kelekci, P. Tasli, E. Ozbay and S. B. Lisesivdin “Self-consistent Transport Properties of Graphene Sheets” Turkish Physical Society XXVIII. International Conference, p710 (2011).

31 G. Karakoc, G. Atmaca, E. Yazbahar, P. Tasli and S. B. Lisesivdin “Numerical Investigation of Two-dimensional Electron Gas in AlGaN/AlN/GaN HEMT with InGaN/GaN Multi-quantum Well Structure” Turkish Physical Society XXVIII. International Conference, p745 (2011).

30 K. Elibol, Ö. Kelekçi, G. Atmaca, S. B. Lişesivdin, M. Kasap, S. Özçelik and E. Özbay “Grafen Flake Üretim Yöntemlerinin Geliştirilmesi” XVII. Solid State Matter Physics Ankara Meeting, S2 (2010).

29 G. Atmaca, K. Elibol, P. Taşlı, S. B. Lişesivdin and M. Kasap “Eklem Alan Etkili Transistörlerin Elektriksel Karakteristiklerinin İncelenmesi” XVII. Solid State Matter Physics Ankara Meeting, S12 (2010).

28 Ö. Kelekçi, S. B. Lişesivdin, M. Kasap, S. Özçelik and E. Özbay “InGaN arka bariyerli AlxGa1-xN/AlN/GaN HEMT yapılarındaki ince filmlerin alaşım oranları ve kalınlıklarının nümerik optimizasyonu” XVII. Solid State Matter Physics Ankara Meeting, S17 (2010).

27 K. Elibol, G. Atmaca, P. Taşlı, S. B. Lişesivdin and M. Kasap “GaN Tabanlı MESFET Yapıların 2-boyutta Elektriksel Karakteristikleri” XVII. Solid State Matter Physics Ankara Meeting, P34 (2010).

26 A. F. Kuloglu, S. B. Lişesivdin and M. Kasap “GaAs Tabanlı Bir MOSFET Yapının 2-Boyutta Akım – Gerilim Karakteristiklerinin İncelenmesi” XVII. Solid State Matter Physics Ankara Meeting, P88 (2010).

25 O. Kartaloğlu, G. Atmaca, K. Elibol and S. B. Lişesivdin “Erbiyum Katkılı Eklem Diyotun I-V Karakteristiği” XVII. Solid State Matter Physics Ankara Meeting, P46 (2010).

24 H. Yu, S. Lisesivdin, B. Bolukbas, O. Kelekci, M. Ozturk, H. Cakmak, P. Demirel and E. Ozbay “Double Heterostructure AlGaN/GaN/AlGaN HEMT Based on Grading AlGaN/AlN Buffer Layer”, 2009 MRS Fall Meeting, I: III-Nitride Materials for Sensing, Energy Conversion, and Controlled Light-Matter Interactions, SESSION I4: Surface and Interface Properties II, I4.9 (2009).

23 A. Ilgaz, S. Gokden, A. Teke, S. Ozcelik, S. B. Lisesivdin, E. Ozbay “Safir ve SiC Uzerine Buyutulmus AlGaN/AlN/GaN HEMT Yapilarindaki Sicak Elektron Dinamiginin Karsilastirilmasi” XVI. Solid State Matter Physics Ankara Meeting, P73(2009).

22 G. Atmaca, K. Elibol, P. Tasli, S. B. Lisesivdin, M. Kasap “Cift kanalli AlGaAs/InGaAs/GaAs tabanli p-HEMT Yapilarinda 1 ve 2-boyutta Schrödinger-Poisson Cozumleri ve Akim-Gerilim Incelemeleri” XVI. Solid State Matter Physics Ankara Meeting,P59(2009).

21 S. B. Lisesivdin, H. Altuntaş, A. Yıldız, M. Kasap, E. Ozbay, S. Ozcelik “Sicakliga ve manyetik alana bagli Hall olcumlerinin analizi ile DX-merkezi aktivasyon enerjisi hesabi”XVI. Solid State Matter Physics Ankara Meeting, S9(2009).

20 P. Tasli, S. B. Lisesivdin, A. Yildiz, M. Kasap, E. Ozbay “Determination of Two-Dimensional Electron and Hole Gas Carriers in Al0.88In0.12N/GaN-based Heterostructures Grown by Metal Organic Chemical Vapor Deposition” Turkish Physical Society XXVI. International Conference, p510 (2009).

19 P. Tasli, S. B. Lisesivdin, M. Kasap, K. Elibol, G. Atmaca, E. Ozbay “A Numerical Study on Subband Structure of AlxIn1-xN/GaN-based HEMT Structures with Low-Indium (x>0.82) Barrier Layer” Turkish Physical Society XXVI. International Conference, p509 (2009).

18 A. Yildiz, S. B. Lisesivdin, M. Kasap, S. Özçelik, D. Mardare “Small Polaron Transport In Titanium Dioxide Thin Film” Turkish Physical Society XXV. International Conference, p133 (2008).

17 S. B. Lisesivdin, N. Balkan, O. Makarovsky, A. Patanè, A. Yildiz, M. D. Caliskan, M. Kasap, S. Ozcelik, E. Ozbay “Investigation of the Beating Pattern of Shubnikov-De Haas Oscillations and Spin Splitting in AlGaN/AlN/GaN/AlN Heterostructures” Turkish Physical Society XXV. International Conference, p484 (2008).

16 K. Elibol, G. Atmaca, S. B. Lişesivdin, M. Kasap, S. Özçelik “Optimization of Al-mole Fraction and Layer Thicknesses in AlxGa1-xN/AlN/GaN/AlxGa1-xN/AlN/GaN Double Channel HEMT Structures” Turkish Physical Society XXV. International Conference, p454 (2008).

15 S. B. Lisesivdin, N. Balkan, E. Ozbay, “A Simple Parallel Conduction Extraction Method for MODFET’s and Undoped GaN-based HEMTs” Workshop on Recent Advances of Low Dimensional Structures and Devices, p90 (2008).

14 A. Yildiz, S. Eker, S. B. Lisesivdin, M. Kasap, S. Ozcelik, D. Mardare “On the conduction mechanism of TiO2” 8th International Conference on Physics of Advanced Materials, p28 (2008).

13 A. Yildiz, H. Altuntas, S. B. Lisesivdin, A. Bengi and M. Kasap “Stokes shift in In0.13Ga0.87N epitaxial layer grown by MOVPE” Turkish Physical Society XXIV. International Conference, p152 (2007).

12 H. Altuntas, S. B. Lisesivdin, A. Yildiz, T. Mammedov and S.Ozcelik “MBE Growth and Characterization of n-AlGaAs/GaAs Heterojunction” Turkish Physical Society XXIV. International Conference, p414 (2007).

11 S. B. Lisesivdin, A. Yildiz, S. Acar, M. Kasap, S. Ozcelik, S. Gokden, E. Ozbay “Improved Scattering Analysis of 2DEG carriers in Al0.25Ga0.75N/GaN Heterostructures” NanoTr3 Conference Proceedings, p134 (2007).

10 A. Yildiz, S. B. Lisesivdin, S. Acar, M. Kasap and D. Mardare “Electrical Conductivity Behaviour in Anatase Phase TiO2” NanoTr3 Conference Proceedings, p151 (2007).

9 A. Yildiz, S. B. Lisesivdin, S. Acar, and M. Kasap “Activation Mechanism in InGaN Grown By MOVPE” AIP Conf. Proc. 899 671 (2007).

8 A. Yildiz, S. B. Lisesivdin, S. Acar, and M. Kasap “Mole Fraction Dependence Of Mobility In InxGa1-xN Alloys” AIP Conf. Proc. 899 670 (2007).

7 S. B. Lisesivdin and M. Kasap “Simulation of the Interfacial AlN Layer on Band Structures and Carrier Densities of AlGaN/GaN HEMT Structures” AIP Conf. Proc. 899 622 (2007).

6 S. B. Lisesivdin, A. Yildiz, M. Kasap, and E. Ozbay “Strain Calculations from Hall Measurements in Undoped Al0.25Ga0.75N/GaN HEMT Structures” AIP Conf. Proc. 899 623 (2007).

5 S. B. Lisesivdin, S. Acar, M. Kasap “Transport properties of the 2DEG and minority carriers in AlGaN/GaN HEMT Structures grown by MOCVD” XIII. Solid State Matter Physics Ankara Meeting, P-71, p104 (2006).

4 S. Acar, S. B. Lisesivdin, M. Kasap “Two dimensional hole gas (2DHG) formation evidence in AlGaN/GaN/AlN HEMTs” XIII. Solid State Matter Physics Ankara Meeting, P-72, p105 (2006).

3 S. B. Lisesivdin, S. Acar, M. Kasap and S. Ozcelik “QMSA Analysis and Effects of Extreme Space-Charge Scattering on the Mobility in III-V Systems grown by MBE” Turkish Physical Society XXIII. International Conference, p1214 (2005).

2 S. B. Lisesivdin, U. Yurdugul, S. Demirezen, S. Acar and M. Kasap “Galvanomagnetic measurements of LEC grown Te-doped InSb” XI. Solid State Matter Physics Ankara Meeting, P-46, p79 (2004).

1 I. Kara, S. B. Lisesivdin, S. Acar and M. Kasap “Temperature depence of magnetotransport and electrotransport properties of LEC grown S-doped InAs” XI. Solid State Matter Physics Ankara Meeting, P-34, p 67 (2004).

Books and Book Chapters

2 S. B. Lisesivdin, B. Sarikavak-Lisesivdin, E. Ozbay “Chapter 15: The Effects of the Interaction of Transition Metals on the Electronic Properties of the Graphene Nanosheets and Nanoribbons” Graphene Science Handbook Vol.3, CRCPress, Taylor&Francis, (2016).

1 E. L. Wolf, M. Medikonda, (Transl. eds: B. Sarikavak-Lisesivdin, S. B. Lisesivdin) “Nanoteknoloji Devrimini Anlamak” Nobel Yayınevi, (2014).

Errata and Corrigenda

“Admitting error clears the score, and proves you wiser than before.” Arthur Guiterman, 1871-1943

Please email errors and corrections to sblisesivdin-AT-gmail.com

Errata

  • n/a

Corrigenda

  • G. Atmaca et al. J. Optoelectron. Adv. Mater. 11, 578 (2009).
    • Page 579, Fig. 4: ‘tcr=be/exx’ must be ‘tcr=be/2exx’. Correct formula is used in calculations.
    • In addition, some alphas printed as empty squares, even after proof.
  • S. B. Lisesivdin and E. Ozbay, Optoelectron. Adv. Mater. -Rapid Comm. 3, 904 (2009).
    • Page 905, Fig. 4: ‘tcr=beexx’ must be ‘tcr=be/2exx’. Correct formula is used in calculations.
  • S. B. Lisesivdin et al. Superlatt. Microstruct. 45, 604 (2009).
    • Page 608, Fig. 4: “Sheet Carrier Density (cm-3)” must be “Carrier Density (cm-3)”.
  • S. B. Lisesivdin et al. Opt. Adv. Mater. -Rapid Comm 1, 467 (2007).
    • Page 469, Table 1: Barrier thickness values above 15 (not included) must be shown initalics.
  • S. B. Lisesivdin et al. Semicond. Sci. Technol. 22, 543 (2007).
    • Page 547, paragraph 1, line 5: “10-23 m-3” must be “1023 m-3“.
    • Page 547, Section 5, first paragraph, line 4: “analysed” must be “analyzed”.
    • Page 548, References: “[35] Lisesivdin S B, Acar S and Kasap M 2007 Mat. Sci. Eng. B submitted”. This article was not published in the Mat. Sci. Eng. B because of the important editorial change. Then we continued with the Appl. Phys. Lett. with some enhancements and new authors. True reference must be “S. B. Lisesivdin, A. Yildiz, S. Acar, M. Kasap, S. Ozcelik and E. Ozbay ”Electronic Transport Characterization of AlGaN/GaN HEMT Structures grown by MOCVD” Appl. Phys. Lett. 91, 102113 (2007).” This information was not known in the time of publication.